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Abstract We study single electron tunnelling from the barrier in the binary InAs/GaAs quantum structure including quantum well (QW) and quantum dot (QD). The tunneling is described in the terms of localized/delocalized states and their spectral distribution. The modeling is performed by using the phenomenological efective potential approach for InAs/GaAs heterostructures. The results for the two and three-dimensional models are presented. We focus on the efect of QD-QW geometry variations. The relation to the PL experiments is shown.more » « less
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Filikhin, I.; Peterson, Th.; Vlahovic, B.; Kruchinin, S.P.; Kuzmichev, Yu.B.; Mitic, V. (, Physica E: Low-dimensional Systems and Nanostructures)
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